Energy Infrastructure

Solar Solutions Energy Storage DC Fast EV Charging UPS
Solar Solutions Energy Storage DC Fast EV Charging UPS
Energy Infrastructure Evolution

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Learn more about our full control of the SiC manufacturing value chain.

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onsemi leverages decades of experience in innovative technologies, reliable, highly efficient and quality of next-gen power semiconductors to shorten your development time while exceeding your power density and beating power loss budgets. We are helping you and your manufacturing team sleep better at night knowing you have helped make the world a better place.

Uninterruptible Power Supply (UPS)
Battery Charger
Solar Power Solutions
DC Fast EV Charging
Energy Storage
Power Supply

Faster Switching More Compact End-Product

1200V M3S SiC MOSFETs provide up to 20% power loss reduction in hard switching applications compared to industry leading competition

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Our package technologies are optimized for superior performance, lower thermal resistance than discrete devices, and easy mounting packages that fit industry standard pinouts.

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Did you know that all SPICE Modelling is Not the same? Our SPICE models will take your simulation results to the next level, accelerating time to market.

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EliteSiC Diode Families

Family

Voltages

Optimization

Best Application

D1

Products

650 V, 1200 V, 1700 V

Large die size so low RTH and highest surge current ratings

  • Vienna rectifier input stages

More Details

D2

Products

650 V

High-speed switching with low Vf

  • PFC Stages
  • Output Rectification

More Details

D3

Products

1200 V

High-speed switching with low Vf

  • PFC Stages
  • Output Rectification

More Details

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    EliteSiC MOSFET Families

    Family

    Voltages

    Optimization

    Best Application

    M1

    Products

    1200 V, 1700 V

    Large die size so low RTH


    Balance between switching losses and conduction losses

    • DC-DC solid state relays
    • Traction & motor drives
    • Hard switching applications

    More Details

    M2

    Products

    650 V, 750 V, 1200 V

    Lowest RDS(ON) for low speed applications

    • DC-DC solid state relays
    • Traction & motor drives

    More Details

    M3

    Products

    1200 V

    Fast switching applications with 15V-18V gate drive

    • Hard switching applications
    • LLC resonant applications

    More Details

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      Technical Documents

      Technical Advantages of onsemi's New Elite Power Simulator and Self-Service PLECS Model Generator

      The purpose of this application note is to explain the technical advantages included in the online Elite Power Simulator and Self-Service PLECS Model Generator

      Designing DC Fast Charges (DCFC) for Efficiency, Reliability, and Safety

      This paper will explain key DCFC design considerations and architectures to provide the highest efficiency, reliability, and performance

      Common IGBT Topologies Used in Energy Infrastructure Applications

      We are now experiencing a period of explosive growth in the EV market. According to EV volume, a total of 10.5 million new BEVs and PHEVs were delivered during 2022

      Energy Storge System Solutions

      More and more countries and companies have announced their strategies for achieving a low-carbon, sustainable world

      Power Supply Solutions

      In this paper, we will cover power supply basics along with onsemi's system level simulation tools, featured products, and evaluation board.

      Thermal Management in Silicon Carbide (SiC) Designs

      This paper describes thermal management implications and the total cost of sic-based power systems

      Thermal Calculations for IGBTs

      This application note will explain, in simple terms, how to measure the power and calculate the temperature rise of the diode and IGBT chips

      IGBT Basics

      This paper intends to discuss the characteristics of IGBT and some issues to consider in designing a gate drive as well as the issues to consider

      Effect of Gate-Emitter Voltage on Turn on Losses and Short Circuit Capability

      This application note describes some of the impacts of the gate-emitter voltage on the IGBT device performance.

      SiC Simulations

      In this paper, we will focus more on results obtained only through simulation and how to use the results in some high-power conversion topologies

      Using Physical and Scalable Simulation Models to Evaluate Parameters and Application Results

      Physical and scalable modeling technique is an advanced SPICE modeling approach based on process and layout parameters which enables design optimization through a direct link between SPICE, physical design, and process technology.

      Reliability and Quality for IGBTs

      In today’s semiconductor marketplace two important elements for the success of a company are product quality and reliability.

      Engineering Essentials: Choosing Between Digital Isolators or Optocouplers

      As energy demand expands, current and voltage values also rise. Higher voltages are more common in many applications, even in standalone applications.

      Mounting Instructions for PIM Modules (Q0, Q1, Q2, F1, F2)

      This application note covers the mounting instructions for onsemi Power Integrated Modules (PIMs) using the following packages: Q0, Q1, Q2, F1, F2.

      High Efficiency DC-DC Converter Module

      The NCP12700 is fixed frequency, peak current mode PWM controller for single-ended switch mode power supplies (SMPS).

      Reading onsemi IGBT Datasheets

      The Insulated Gate Bipolar Transistor is a power switch well suited for high power applications such as motor control, UPS and solar inverters, and induction heating.

      Standard Gate-Driver Optocouplers

      The FOD31xx family of gate drivers functions as a power buffer to control the gate of a power MOSFET or IGBT.

      MOSFET Basics

      The Bipolar Power Transistor (BPT), as a switching device for power applications, had a few disadvantages. This led to the development of the power Metal Oxide Semiconductor Field Effect Transistor (MOSFET).

      onsemi M 1 1200 V SiC MOSFETs & Modules: Characteristics and Driving Recommendations

      This paper provides an overview on the key characteristics of onsemi M 1 1200 V SiC MOSFETs and how they can be influenced by the driving conditions. As part of the full wide bandgap ecosystem that onsemi offers, this article also provides a guideline on the usage of an isolated gate driver for SiC MOSFETs.

      Galvanic Isolation Gate Driver Design Tips

      This application note describes some parameters, functions, and design tips of onsemi’s galvanic isolation gate drivers in system application.

      Physically Based, Scalable SPICE Modeling Methodologies for Modern Power Electronic Devices

      This paper describes how onsemi’s physically based, scalable SPICE models will take your simulation results to the next level, as a result, shorten your time to market.

      SiC MOSFETs: Gate Drive Optimization

      This paper highlights the unique device characteristics associated with SiC MOSFETs. Critical design requirements related to optimal gate−drive design for maximizing SiC switching performance and system level considerations will also be discussed.

      Power Packages Heat Sink Mounting Guide

      This document provides guidelines for mounting heat sinks for the proper thermal management. We describe heat-sink mounting methods, considerations, contact thermal resistance, and mounting torque for various packages.

      A Guideline on the Usage of an Isolated Gate Driver to Efficiently Drive SiC MOSFETs

      SiC MOSFETs have become a real alternative to using IGBTs in power applications. Isolated gate drivers are designed for the highest switching speeds and system size constrains required by technologies such as SiC by providing reliable control over IGBT and MOSFET. This application note focuses on optimization the design of gate driving voltage for speed to minimize switching losses and to get the full benefit of the devices.

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