Name: Silicon Carbide (SiC) MOSFET - EliteSiC, 23 mohm, 650 V, M3S, D2PAK-7L
Brand: Silicon Carbide (SiC) MOSFET - EliteSiC, 23 mohm, 650 V, M3S, D2PAK-7L
SKU: NTBG023N065M3S

Silicon Carbide (SiC) MOSFET - EliteSiC, 23 mohm, 650 V, M3S, D2PAK-7L

Overview

The new family of 650V M3S planar SiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 18V gate drive but also works well with 15V gate drive.

Applications

Industrial
Cloud system

End Products

UPS / ESS
Solar
EV Charger
AI Data center

Features

D2PAK-7L package with Kelvin source configuration
Excellent FOM [ = Rdson * Eoss ]
Ultra Low Gate Charge (QG(tot) = 69 nC)
High Speed Switching with Low Capacitance (Coss = 153 pF)
15V to 18V Gate Drive
New M3S technology: 23 mohm RDS(ON) with low Eon and Eoff losses
100% Avalanche Tested
Halide Free and RoHS Compliant

Material Composition

Product Change Notification

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Family

Blocking Voltage BV_DSS (V)

I_D(max) (A)

R_DS(on) Typ @ 25°C (mΩ)

Q_g Total (nC)

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T_j Max (°C)

Reference Price

NTBG023N065M3S

Active, New

D2PAK7 (TO-263-7L HV)

260

REEL

800

650

153

175

$5.8467

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Silicon Carbide (SiC) MOSFETs | NTBG023N065M3S

Silicon Carbide (SiC) MOSFET - EliteSiC, 23 mohm, 650 V, M3S, D2PAK-7L

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